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STFW8N120K5 - N-channel MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1) technology based on an innovative proprietary vertical structure.

dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • 3 2 1 Order code VDS RDS(on) max. STFW8N120K5 1200 V 2.00 Ω.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected ID 6A PTOT 48 W TO-3PF D(2).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFW8N120K5 Datasheet N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package Features 3 2 1 Order code VDS RDS(on) max. STFW8N120K5 1200 V 2.00 Ω • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected ID 6A PTOT 48 W TO-3PF D(2) Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.