Datasheet Details
| Part number | STG200M65F2D8AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 301.13 KB |
| Description | IGBT |
| Datasheet |
 STG200M65F2D8AG Datasheet
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| Part number | STG200M65F2D8AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 301.13 KB |
| Description | IGBT |
| Datasheet |
STG200M65F2D8AG Datasheet
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This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing.
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