STG200M65F2D8AG
Overview
- AEC-Q101 qualified
- Low-loss series IGBT G
- Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C E
- 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD
