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STG200M65F2D8AG - IGBT

STMicroelectronics

The STG200M65F2D8AG by STMicroelectronics is a IGBT. Below is the official datasheet preview.

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STG200M65F2D8AG IGBT by STMicroelectronics - Datasheet Preview — Official preview page of the STG200M65F2D8AG IGBT datasheet (STMicroelectronics).

Datasheet Details

Part number	STG200M65F2D8AG
Manufacturer	STMicroelectronics
File Size	301.13 KB
Description	IGBT
Datasheet	STG200M65F2D8AG-STMicroelectronics.pdf
Additional preview pages of the STG200M65F2D8AG datasheet.

STG200M65F2D8AG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

AEC-Q101 qualified.
Low-loss series IGBT G.
Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Maximum junction temperature: TJ = 175 °C E.
6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD.

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Published: Apr 3, 2020 |