Datasheet4U.com

STGB15M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

📥 Download Datasheet

STGB15M65DF2 Datasheet Preview — Preview of STGB15M65DF2 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	STGB15M65DF2
Manufacturer	STMicroelectronics
File Size	915.56 KB
Description	Trench gate field-stop IGBT
Datasheet	STGB15M65DF2-STMicroelectronics.pdf

STGB15M65DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 15 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

📁 STGB15M65DF2 Similar Datasheet

STGB10HF60KD - Short-circuit Rugged IGBT (ST Microelectronics)
STGB10N60L - N-CHANNEL IGBT (ST Microelectronics)
STGB10NB37LZ - IGBT (ST Microelectronics)
STGB10NB40LZ - N-CHANNEL IGBT (ST Microelectronics)
STGB10NB60S - low drop IGBT (ST Microelectronics)
STGB10NC60HD - N-CHANNEL IGBT (ST Microelectronics)
STGB10NC60HDT4 - 600V 10A IGBT (ST Microelectronics)
STGB10NC60KD - 600V short-circuit rugged IGBT (ST Microelectronics)

Other Datasheets by STMicroelectronics

STGB15H60DF - Trench gate field-stop IGBT
STGB10H60DF - 600V 10A IGBT
STGB10M65DF2 - Trench gate field-stop IGBT
STGB10NB40LZT4 - 410V internally clamped IGBT
STGB10NC60K - short-circuit rugged IGBT
STGB10NC60KDT4 - 600V short-circuit rugged IGBT

Published: Mar 22, 2016 |