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STGB30H60DFB Datasheet, STMicroelectronics

STGB30H60DFB igbt equivalent, igbt.

STGB30H60DFB Avg. rating / M : 1.0 rating-14

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STGB30H60DFB Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC.

Application


* Photovoltaic inverters
* High frequency converters Description These devices are IGBTs developed using an adva.

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