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STGB30H60DFB - 600V 30A IGBT

STMicroelectronics

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Datasheet Details

Part number	STGB30H60DFB
Manufacturer	STMicroelectronics
File Size	3.27 MB
Description	600V 30A IGBT
Datasheet	STGB30H60DFB-STMicroelectronics.pdf

STGB30H60DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 14, 2020 |