This application specific IGBT utilizes the most advanced PowerMESH™ technology.
The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
| Part number | STGB35N35LZ |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 714.43 KB |
| Description | IGBT |
| Datasheet |
 STGB35N35LZ Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STGB3NB60FD | N-CHANNEL IGBT | ST Microelectronics |
| STGB3NB60HD | N-CHANNEL IGBT | ST Microelectronics |
| STGB3NB60K | IGBT | ST Microelectronics |
| STGB3NB60KD | IGBT | ST Microelectronics |
| STGB3NB60SD | N-CHANNEL IGBT | ST Microelectronics |
| Part Number | Description |
|---|---|
| STGB30H60DF | 30A high speed trench gate field-stop IGBT |
| STGB30H60DFB | 600V 30A IGBT |
| STGB30H60DLLFBAG | Automotive-grade trench gate field-stop IGBT |
| STGB30H65DFB2 | high-speed HB2 series IGBT |
| STGB30M65DF2 | Trench gate field-stop IGBT |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
