STMicroelectronics STGD20N40LZ
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.FEATURES
● Designed for automotive applications and AEC-Q101 qualified● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE
APPLICATIONS
● Pencil coil electronic ignition driverDESCRIPTION
The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Order codes STGB20N40LZ STGD20N40LZ Table 1. Device summary Marking Packages GB20N40LZ D2PAK GD20N40LZ DPAK Packaging Tape and reel Tape and reel June 2014 This is information on a product in full production. DocID024251 Rev 5 1/20 Contents Contents STGB20N40LZ, STGD20N40LZ 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .