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STGD7NB60M Datasheet

N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT

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STGP7NB60M - STGD7NB60M
N-CHANNEL 7A - 600V TO-220 / DPAK
PowerMESH™ IGBT
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGP7NB60M 600 V
STGD7NB60M 600 V
< 1.9 V
< 1.9 V
7A
7A
s HIGH INPUT IMPEDANCE
s LOW ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s HIGH FREQUENCY OPERATION
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
3
2
1
TO-220
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
INTERNAL SCHEMATIC DIAGRAM
www.DataSAhPeePt4LUIC.coAmTIONS
s MOTOR CONTROLS
s SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
MARKING
STGP7NB60M
GP7NB60M
STGD7NB60MT4
GD7NB60M
PACKAGE
TO-220
DPAK
PACKAGING
TUBE
TAPE & REEL
June 2003
1/11


STMicroelectronics Electronic Components Datasheet

STGD7NB60M Datasheet

N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT

No Preview Available !

STGP7NB60M - STGD7NB60M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Voltage (VGS = 0)
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at TC = 25°C
IC Collector Current (continuous) at TC = 100°C
ICM ( ) Collector Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Value
TO-220
DPAK
600
±20
14
7
56
80 70
0.64 0.56
– 55 to 150
150
Unit
V
V
A
A
A
W
W/°C
°C
°C
TO-220
1.56
62.5
DPAK
1.78
100
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
Voltage
600
ICES Collector cut-off
www.DataSheet4U.com(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
100
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250 µA
VGE = 15V, IC = 7 A
VGE = 15V, IC= 7 A, Tj =125°C
Min.
3
Typ.
1.5
1.2
Max.
5
1.9
Unit
V
V
V
2/11


Part Number STGD7NB60M
Description N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT
Maker ST Microelectronics
Total Page 11 Pages
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