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STGF15H60DF Datasheet

Trench gate field-stop IGBT

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STGB15H60DF, STGF15H60DF, STGP15H60DF
Datasheet
Trench gate field-stop IGBT, H series 600 V, 14 A high speed
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220FP
TO-220
1 23
C(2, TAB)
G(1)
E(3)
NG1E3C2T
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Applications
• Motor control
• UPS, PFC
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the H series of IGBTs, which represents an
optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGB15H60DF
STGF15H60DF
STGP15H60DF
DS9881 - Rev 3 - April 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGF15H60DF Datasheet

Trench gate field-stop IGBT

No Preview Available !

STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP (2)
Pulsed collector current
VGE Gate-emitter voltage
Continuous forward current TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP (2)
Pulsed forward current
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink
(t = 1 s; Tc = 25 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Value
D2PAK, TO-220
TO-220FP
600
30 30 (1)
15 15 (1)
60 60
±20
30 30 (1)
15 15 (1)
60 60
2500
115
-55 to 150
-55 to 175
30
Unit
V
A
A
V
A
A
V
W
°C
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJC
RthJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
D2PAK, TO-220 TO-220FP
1.3 5
2.78 6.25
62.5 62.5
Unit
°C/W
°C/W
°C/W
DS9881 - Rev 3
page 2/24


Part Number STGF15H60DF
Description Trench gate field-stop IGBT
Maker STMicroelectronics
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