Full PDF Text Transcription for STGF15M65DF2 (Reference)
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STGF15M65DF2 Trench gate field-stop IGBT M series, 650 V 15 A low loss Datasheet - preliminary data TO-220FP Figure 1: Internal schematic diagram Features 6 µs of short...
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TO-220FP Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.
STGF15M65DF2 Datasheet
