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STGF20H60DF - 600V 20A high speed trench gate field-stop IGBT

Download the STGF20H60DF datasheet PDF. This datasheet also covers the STGB20H60DF variant, as both devices belong to the same 600v 20a high speed trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.
  • Ultrafast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB20H60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB 3 2 1 TO-220 TAB 3 2 1 TO-220FP 3 1 D²PAK Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Figure 1. Internal schematic diagram Description G (1) C (2, TAB) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.