STGF20M65DF2
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Key Features
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameter distribution
- Safer paralleling
- Low - Soft and very fast recovery antiparallel diode
