STGF20M65DF2 Datasheet | STMicroelectronics

Features - High short-circuit withstand time - VCE(sat) = 1.55 V (typ.) @ IC = 20 A - Tight parameter distribution - Safer paralleling - Low thermal resistance - Soft and very fast recovery antiparallel diode Applications - Motor control - UPS - PFC - General-purpose inverters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGF20M65DF2 Product summary Order code Marking G20M65DF2 Package TO-220FP Packing Tube DS11363 - Rev 4 - October 2018 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) IC(1) Continuous collector current at TC = 25 °C IC(1) Continuous collector current at TC = 100 °C ICP(2) Pulsed collector current VGE Gate-emitter voltage IF(1) Continuous forward current at TC = 25...