900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STGF20M65DF2 Datasheet

IGBT

No Preview Available !

STGF20M65DF2
Datasheet
Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT
23
1
TO-220FP
C (2)
G (1)
Sc12850_no_tab
E (3)
Features
• High short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
Applications
• Motor control
• UPS
• PFC
• General-purpose inverters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product status link
STGF20M65DF2
Product summary
Order code
STGF20M65DF2
Marking
G20M65DF2
Package
TO-220FP
Packing
Tube
DS11363 - Rev 4 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGF20M65DF2 Datasheet

IGBT

No Preview Available !

STGF20M65DF2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0)
IC(1) Continuous collector current at TC = 25 °C
IC(1) Continuous collector current at TC = 100 °C
ICP(2)
Pulsed collector current
VGE Gate-emitter voltage
IF(1) Continuous forward current at TC = 25 °C
IF(1) Continuous forward current at TC = 100 °C
IFP(2)
Pulsed forward current
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, TC = 25 °C)
PTOT
Total dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Value
650
40
20
80
±20
40
20
80
2.5
32.6
-55 to 150
-55 to 175
Unit
V
A
A
A
V
A
A
A
kV
W
°C
°C
Symbol
RthJC
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
4.6
6.25
62.5
Unit
°C/W
°C/W
°C/W
DS11363 - Rev 4
page 2/16


Part Number STGF20M65DF2
Description IGBT
Maker STMicroelectronics
PDF Download

STGF20M65DF2 Datasheet PDF






Similar Datasheet

1 STGF20M65DF2 IGBT
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy