STGFW20V60DF Overview
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGFW20V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Very high speed switching series
- Tail-less switching off
- VCE(sat) = 1.8 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package