STGFW20V60DF Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

STGFW20V60DF trench gate field-stop igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STGFW20V60DF
Manufacturer	STMicroelectronics
File Size	703.74 KB
Description	Trench gate field-stop IGBT
Datasheet	STGFW20V60DF Datasheet

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data TO-3PF 3 2 1 Figure 1: Internal schematic diagram C.

Key Features

Maximum junction temperature: TJ = 175 °C.
Very high speed switching series.
Tail-less switching off.
VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Lead free package.

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