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STGFW20V60F - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.