STMicroelectronics STGFW40V60F
The diode is the same of the co-packed STGW40V60DF.FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.8 V (typ.) @ IC = 40 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
APPLICATIONS
● Welding● Power factor correction
● UPS
● Solar inverters
● Chargers
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGB40V60F STGFW40V60F STGP40V60F STGW40V60F DS9698 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings...