900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STGP10H60DF Datasheet

IGBT

No Preview Available !

STGB10H60DF, STGF10H60DF, STGP10H60DF
Datasheet
Trench gate field-stop 600 V, 10 A high speed H series IGBT
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220FP
TO-220
1 23
C(2, TAB)
G(1)
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
E(3) stop structure. These devices are part of the H series of IGBTs, which represents an
NG1E3C2T optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGB10H60DF
STGF10H60DF
STGP10H60DF
DS9880 - Rev 4 - March 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGP10H60DF Datasheet

IGBT

No Preview Available !

STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP (2)
Pulsed collector current
Gate-emitter voltage
VGE
Transient gate-emitter voltage
Continuous forward current TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP (2)
Pulsed forward current
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; Tc = 25 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Value
D2PAK, TO-220
TO-220FP
600
20 20 (1)
10 10 (1)
40 40
±20
±30
20 20 (1)
10 10 (1)
40 40
2.5
115
-55 to 150
-55 to 175
30
Unit
V
A
A
V
A
A
kV
W
°C
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJC
RthJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
D2PAK, TO-220 TO-220FP
1.3 5
2.78 6.25
62.5 62.5
Unit
°C/W
°C/W
°C/W
DS9880 - Rev 4
page 2/24


Part Number STGP10H60DF
Description IGBT
Maker STMicroelectronics
PDF Download

STGP10H60DF Datasheet PDF






Similar Datasheet

1 STGP10H60DF IGBT
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy