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STGP10NC60H - N-CHANNEL IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • Type STGP10NC60H.
  • VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode TO-220 3 1 2.

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www.DataSheet4U.com STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH™ IGBT General features Type STGP10NC60H ■ ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode TO-220 3 1 2 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.