STGP30M65DF2 Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

STGP30M65DF2 trench gate field-stop igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STGP30M65DF2
Manufacturer	STMicroelectronics
File Size	524.32 KB
Description	Trench gate field-stop IGBT
Datasheet	STGP30M65DF2 Datasheet

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.

Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Overview

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic.

Key Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

More Datasheets from STMicroelectronics

Part Number	Description
STGP30H60DF	30A high speed trench gate field-stop IGBT
STGP30H60DFB	600V 30A IGBT
STGP30NC60K	short circuit rugged IGBT
STGP30NC60S	IGBT
STGP30NC60W	ultra fast IGBT
STGP30V60DF	Trench gate field-stop IGBT
STGP30V60F	Trench gate field-stop IGBT
STGP35HF60W	35A 600V Ultrafast IGBT
STGP35N35LZ	IGBT
STGP3HF60HD	IGBT