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STGP30V60F Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGP30V60F datasheet PDF. This datasheet also includes the STGB30V60F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGB30V60F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

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