STMicroelectronics STGP35N35LZ
This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.| Part No. | STGP35N35LZ |
|---|---|
| Datasheet | STGP35N35LZ Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Designed for automotive applications and AEC-Q101 qualified● Low threshold voltage
● Low on-voltage drop
● High voltage clamping feature
● Logic level gate charge
● ESD gate-emitter protection
● Gate and gate-emitter integrated resistors Application
● Automotive ignition
DESCRIPTION
The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) SC30180 Order codes STGB35N35LZ-1 STGB35N35LZT4 STGP35N35LZ Table 1. Device summary Marking Package GB35N35LZ GB35N35LZ GP35N35LZ I²PAK D²PAK TO-220 Packaging Tube Tape and reel Tube May 2013 This is information on a product in full production. DocID12253 Rev 6 1/18 Contents Contents STGB35N35LZ, STGP35N35LZ 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
