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STGP35N35LZ - IGBT

Download the STGP35N35LZ datasheet PDF. This datasheet also covers the STGB35N35LZ variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Key Features

  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB35N35LZ-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ TAB 3 1 D²PAK TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Application • Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.