STGW20NB60KD Datasheet | STMicroelectronics

DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s U.P.S. s WELDING EQUIPMENTS ORDERING INFORMATION SALES TYPE STGW20NB60KD MARKING GW20NB60KD PACKAGE TO-247 PACKAGING TUBE August 2003 1/8 ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 40 20 80 10 150 1.2 - 55 to 150 Unit V V V A A A µs W W/°C °C THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.83 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 Min. 600 10 100 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250µA VGE = 15V, IC = 20 A VGE = 15V, IC = 20 A, Tj =125°C Min. 5 2.3 1.9 Typ. Max. 7 2.8 Unit V V V DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc tscw Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge...