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STGW20V60F - IGBT

Download the STGW20V60F datasheet PDF. This datasheet also covers the STGFW20V60F variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGFW20V60F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.