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STGW25M120DF3 Datasheet, STMicroelectronics

STGW25M120DF3 igbt equivalent, 1200v 25a low-loss m series igbt.

STGW25M120DF3 Avg. rating / M : 1.0 rating-13

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STGW25M120DF3 Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
* Tight parameter distribut.

Application


* Industrial drives
* UPS
* Solar
* Welding Description E(3) NG1E3C2T This device is an IGBT developed .

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STGW25M120DF3 Page 1 STGW25M120DF3 Page 2 STGW25M120DF3 Page 3

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