STGW40M120DF3 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW40M120DF3
Manufacturer	STMicroelectronics
File Size	1.01 MB
Description	Trench gate field-stop IGBT
Datasheet	STGW40M120DF3-STMicroelectronics.pdf

STGW40M120DF3 Product details

Description

( This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.Order code STGW40M120DF3 STGWA40M120DF3 Table 1.

Features

72 72ORQJOHDGV Figure 1.Internal schematic diagram.
10 µs of short-circuit withstand time.
VCE(sat) = 1.85 V (typ. ) @ IC = 40 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and fast recovery antiparallel diode.

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Published: Dec 11, 2019 |