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STGW60H65DFB-4 - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Excellent switching performance thanks to the extra driving kelvin pin.
  • Low VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW60H65DFB-4 Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT TO247-4 2 34 1 C(1, TAB) G(4) K(3) Features • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters DescriptionE(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.