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STGW60H65DRF Datasheet

field stop trench gate IGBT

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STGW60H65DRF
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
3
2
1
TO-247
Figure 1. Internal schematic diagram
Datasheet - production data
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
High switching frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Features
Very high speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
6 µs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
Order code
Table 1. Device summary
Marking
Package
STGW60H65DRF
GW60H65DRF
TO-247
April 2013
This is information on a product in full production.
DocID022346 Rev 6
Packaging
Tube
1/13
www.st.com
13


STMicroelectronics Electronic Components Datasheet

STGW60H65DRF Datasheet

field stop trench gate IGBT

No Preview Available !

Electrical ratings
1 Electrical ratings
STGW60H65DRF
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
650
IC Continuous collector current at TC = 25 °C
120
IC
ICP (1)
Continuous collector current at TC = 100 °C
Pulsed collector current
60
240
VGE Gate-emitter voltage
±20
IF
IFP(1)
Continuous forward current at TC = 25 °C
Continuous forward current at TC = 100 °C
Pulsed forward current
120
60
240
PTOT Total dissipation at TC = 25 °C
420
tSC
Short-circuit withstand time at VCC = 400 V,
VGE = 15 V
6
TSTG
TJ
Storage temperature range
Operating junction temperature
- 55 to 175
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Symbol
RthJC
RthJC
RthJA
Table 3. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.35
1.38
50
Unit
V
A
A
A
V
A
A
W
µs
°C
Unit
°C/W
°C/W
°C/W
2/13 DocID022346 Rev 6


Part Number STGW60H65DRF
Description field stop trench gate IGBT
Maker STMicroelectronics
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