STGW60H65DRF Overview
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a promise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.
STGW60H65DRF Key Features
- Very high speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 µs short-circuit withstand time
- Ultrafast soft recovery antiparallel diode