Datasheet Details
| Part number | STGW60H65DRF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 907.78 KB |
| Description | field stop trench gate IGBT |
| Datasheet |
 STGW60H65DRF Datasheet
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General Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.
Key Features
- Very high speed switching.
- Tight parameters distribution.
- Safe paralleling.
- Low thermal resistance.
- 6 µs short-circuit withstand time.
- Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247 April 2013 This is information on a product in full production. DocID022346 Rev 6 Packaging Tube 1/13 www. st. com 13 Electrical ratings 1 Electrical ratings STGW60H65DRF Table 2. Absolute maximu.