STGW60H65DRF Datasheet - STMicroelectronics

field stop trench gate IGBT

STGW60H65DRF Features

* Very high speed switching

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* 6 µs short-circuit withstand time

* Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247

STGW60H65DRF General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperatur.

STGW60H65DRF Datasheet (907.78 KB)

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Datasheet Details

Part number:

STGW60H65DRF

Manufacturer:

STMicroelectronics ↗

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907.78 KB

Description:

Field stop trench gate igbt.
STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1. Internal schematic diagram Datasheet - production .

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STGW60H65DRF field stop trench gate IGBT STMicroelectronics

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STGW60H65DRF Features

STGW60H65DRF General Description

Datasheet Details

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