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STGW80H65FB - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Key Features

  • TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P.
  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 80 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications Figure 1. Internal schematic diagram C (2 or TAB) • Photovoltaic inverters • High frequency converters Description G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.