• Part: STGWA100H65DFB2
  • Description: IGBT
  • Manufacturer: STMicroelectronics
  • Size: 315.65 KB
Download STGWA100H65DFB2 Datasheet PDF
STGWA100H65DFB2 page 2
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STGWA100H65DFB2 Key Features

  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient