STMicroelectronics STGWA100H65DFB2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | STGWA100H65DFB2 |
|---|---|
| Datasheet | STGWA100H65DFB2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 100A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
● Very fast and soft recovery co-packaged diode
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient NG1E3C2T
APPLICATIONS
● Welding● Power factor correction
● UPS
● Solar inverters
● Chargers
DESCRIPTION
A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA100H65DFB2 Product summary Order code STGWA100H65DFB2 Marking G100H65DFB2 Package TO-247 long leads Packing Tube DS13277 - Rev 2 - July 2021 For further information contact your local STMicroelectronics sales office. STGWA100H65DFB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC C...
