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STGWA100H65DFB2 - IGBT

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STMicroelectronics

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STGWA100H65DFB2 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGWA100H65DFB2

Datasheet Details

Part number	STGWA100H65DFB2
Manufacturer	STMicroelectronics
File Size	315.65 KB
Description	IGBT
Datasheet	STGWA100H65DFB2 Datasheet
Additional preview pages of the STGWA100H65DFB2 datasheet.

Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient NG1E3C2T.

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Published: Jun 26, 2023 |