Datasheet Details
| Part number | STGWA100H65DFB2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 315.65 KB |
| Description | IGBT |
| Datasheet | STGWA100H65DFB2-STMicroelectronics.pdf |
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Overview: STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package TO-247 long leads C(2,.
| Part number | STGWA100H65DFB2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 315.65 KB |
| Description | IGBT |
| Datasheet | STGWA100H65DFB2-STMicroelectronics.pdf |
|
|
|
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
A very fast soft recovery diode is co-packaged in antiparallel with the IGBT.
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