logo

STGWA30H65FB Datasheet, STMicroelectronics

STGWA30H65FB igbt equivalent, igbt.

STGWA30H65FB Avg. rating / M : 1.0 rating-11

datasheet Download

STGWA30H65FB Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* High-speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V(typ) @ IC = 30 A
* Safe paralle.

Application


* Photovoltaic inverters
* High-frequency converters Description This device is an IGBT developed using an advan.

Image gallery

STGWA30H65FB Page 1 STGWA30H65FB Page 2 STGWA30H65FB Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts