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STGWA30H65FB - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High-speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.55 V(typ) @ IC = 30 A.
  • Safe paralleling.
  • Tight parameter distribution.
  • Low thermal resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  High-speed switching series  Minimized tail current  VCE(sat) = 1.55 V(typ) @ IC = 30 A  Safe paralleling  Tight parameter distribution  Low thermal resistance Applications  Photovoltaic inverters  High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.