STGW40H120DF2,
STGWA40H120DF2
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datasheet - production data
Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
VCE(sat) = 2.1 V (typ.) @ IC = 40 A
5 μs minimum short circuit withstand time at
TJ=150 °C
Safe paralleling
Very fast recovery antiparallel diode
Low thermal resistance
Figure 1: Internal schematic diagram
Applications
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High frequency converters
Order code
STGW40H120DF2
STGWA40H120DF2
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Table 1: Device summary
Marking
Package
Packaging
G40H120DF2
TO-247
Tube
G40H120DF2
TO-247 long leads
Tube
June 2016
DocID023753 Rev 5
This is information on a product in full production.
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