Description
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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.Order code STGW40M120DF3 STGWA40M120DF3
Table 1.
Features
- 72 72ORQJOHDGV
Figure 1.Internal schematic diagram.
- 10 µs of short-circuit withstand time.
- VCE(sat) = 1.85 V (typ. ) @ IC = 40 A.
- Tight parameters distribution.
- Safer paralleling.
- Low thermal resistance.
- Soft and fast recovery antiparallel diode.