STGWA50HP65FB2
Description
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.
Key Features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
- Co-packaged protection diode
- Minimized tail current
- Tight parameter distribution
- Low - Positive VCE(sat) temperature coefficient
