STGWA50HP65FB2 - IGBT

STMicroelectronics

STGWA50HP65FB2 Datasheet Preview — Preview of STGWA50HP65FB2 PDF

Datasheet Details

Part number	STGWA50HP65FB2
Manufacturer	STMicroelectronics ↗
File Size	537.85 KB
Description	IGBT
Datasheet	STGWA50HP65FB2-STMicroelectronics.pdf

STGWA50HP65FB2 Product details

Description

E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.A diode used for protection purposes only is co-packaged in antiparallel with the IGBT.The result is a product specifically designed to maximize efficiency for a wide range of fas

Features

Maximum junction temperature : TJ = 175 °C.
Low VCE(sat) = 1.55 V(typ. ) @ IC = 50 A.
Co-packaged protection diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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Published: Aug 11, 2020 |