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STMicroelectronics Electronic Components Datasheet

STGWA50HP65FB2 Datasheet

IGBT

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STGWA50HP65FB2
Datasheet
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
in a TO-247 long leads package
G(1)
C(2, TAB)
Features
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Co-packaged protection diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
Applications
• Welding
• Power factor correction
Description
E(3)
The newest IGBT 650 V HB2 series represents an evolution of the advanced
NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A diode used for protection
purposes only is co-packaged in antiparallel with the IGBT. The result is a product
specifically designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA50HP65FB2
Product summary
Order code
STGWA50HP65FB2
Marking
G50HP65FB2
Package
TO-247 long leads
Packing
Tube
DS13184 - Rev 1 - December 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGWA50HP65FB2 Datasheet

IGBT

No Preview Available !

STGWA50HP65FB2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP (1)(2)
Pulsed collector current
Gate-emitter voltage
VGE
Transient gate-emitter voltage (tp ≤ 10 μs)
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP(1)(2)
Pulsed forward current
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width is limited by maximum junction temperature.
2. Defined by design, not subject to production test.
Symbol
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
650
86
53
150
±20
±30
5
5
10
272
-55 to 150
-55 to 175
Value
0.55
5
50
Unit
V
A
A
A
V
A
A
W
°C
°C
Unit
°C/W
DS13184 - Rev 1
page 2/15



Part Number STGWA50HP65FB2
Description IGBT
Maker STMicroelectronics
Total Page 3 Pages
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