Datasheet Details
| Part number | STGWA50HP65FB2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 537.85 KB |
| Description | IGBT |
| Datasheet |
 STGWA50HP65FB2 Datasheet
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| Part number | STGWA50HP65FB2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 537.85 KB |
| Description | IGBT |
| Datasheet |
STGWA50HP65FB2 Datasheet
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E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
A diode used for protection purposes only is co-packaged in antiparallel with the IGBT.
STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package G(1) C(2,.
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