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STGWT20H60DF Datasheet 600V 20A high speed trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWT20H60DF datasheet PDF. This datasheet also includes the STGW20H60DF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW20H60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

Overview

TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1.

Internal schematic diagram C (2, TAB) G (1) STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.
  • Ultrafast soft recovery antiparallel diode.

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