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STGWT20V60F - IGBT

Download the STGWT20V60F datasheet PDF. This datasheet also covers the STGFW20V60F variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Lead free package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGFW20V60F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STGWT20V60DF 600V 20A very high speed trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
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STGWT15H60F Trench gate field-stop IGBT
STGWT30H60DFB 30A high speed HB series IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1. Internal schematic diagram C (2, TAB) G (1) Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Lead free package Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.