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STGWT80H65FB - IGBT

Download the STGWT80H65FB datasheet PDF. This datasheet also covers the STGW80H65FB variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Key Features

  • TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P.
  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW80H65FB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 80 A • Tight parameter distribution • Safe paralleling • Low thermal resistance Applications Figure 1. Internal schematic diagram C (2 or TAB) • Photovoltaic inverters • High frequency converters Description G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.