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STGWT80V60DF - IGBT

Download the STGWT80V60DF datasheet PDF. This datasheet also covers the STGW80V60DF variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 80 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW80V60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.