STH130N8F7-2 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH130N8F7-2 Table 1: Device summary Marking Package 130N8F7 H²PAK-2 Packaging Tape and reel March 2017 DocID027283 Rev 2 This is information on a product in full...
STH130N8F7-2 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
