STMicroelectronics STH13N120K5-2AG
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STH13N120K5-2AG |
|---|---|
| Datasheet | STH13N120K5-2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STH13N120K5-2AG VDS 1200 V RDS(on) max. 0.69 Ω ID 12 A PTOT 250 W● AEC-Q101 qualified
● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STH13N120K5-2AG Product summary(1) Order code STH13N120K5-2AG Marking 13N120K5 Package H²PAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev. D. DS12917 - Rev 6 - August 2025 For further information, contact your local STMicroelectronics sales office. STH13N120K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR (2) Maximum current during repetitive or single-pulse avalanche EAS (3) Single-pulse a...
