STH13N120K5-2AG
Features
Order code STH13N120K5-2AG
VDS 1200 V
RDS(on) max. 0.69 Ω
ID 12 A
PTOT 250 W
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best Fo M (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STH13N120K5-2AG
Product summary(1)
Order code
Marking
13N120K5
Package
H²PAK-2
Packing
Tape and reel
1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev. D.
DS12917
- Rev 5
- June 2020 For further information contact your local STMicroelectronics sales office.
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STH13N120K5...
