Download the STH140N6F7-6 datasheet PDF.
This datasheet also covers the STH140N6F7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
Order code STH140N6F7-2 STH140N6F7-6
VDS 60 V
RDS(on) max. 0.0032 Ω
ID 80 A
PTOT 158 W.
Note: The manufacturer provides a single datasheet file (STH140N6F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STH140N6F7-6 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STH140N6F7-6. For precise diagrams, and layout, please refer to the original PDF.
STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal s...
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and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STH140N6F7-6 Datasheet
