STH200N10WF7-2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STH200N10WF7-2 Features

* Order code VDS STH200N10WF7-2 100 V

* Best-in-class SOA capability

* High current surge capability

* Extremely low on-resistance RDS(on) max. 4.0 mΩ ID 180 A PTOT 340 W Applications

* Hot-swap

* Electronic fuse

* Load switch

* In-rush

STH200N10WF7-2 General Description

This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switchin.

STH200N10WF7-2 Datasheet (372.73 KB)

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Datasheet Details

Part number:

STH200N10WF7-2

Manufacturer:

STMicroelectronics ↗

File Size:

372.73 KB

Description:

N-channel power mosfet.
STH200N10WF7-2 Datasheet N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3) DT.

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STH200N10WF7-2 Features

STH200N10WF7-2 General Description

Datasheet Details

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