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STH270N4F3-6 - N-Channel Power MOSFET

General Description

This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.

Table 1.

Key Features

  • Type STH270N4F3-6 VDSS 40 V RDS(on) < 1.7 mΩ ID (1) 180 A TAB 1. Current limited by package.
  • Conduction losses reduced Low profile, very low parasitic inductance, high current package 1 H2PAK-6l 7.

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STH270N4F3-6 N-channel 40 V, 1.40 mΩ , 180 A, H2PAK STripFET™ III Power MOSFET Features Type STH270N4F3-6 VDSS 40 V RDS(on) < 1.7 mΩ ID (1) 180 A TAB 1. Current limited by package ■ ■ Conduction losses reduced Low profile, very low parasitic inductance, high current package 1 H2PAK-6l 7 Applications ■ Switching application – Automotive Figure 1. Internal schematic diagram Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. www.DataSheet4U.com Table 1. Device summary Order code Marking 270N4F3 Package H 2PAK Packaging Tape and reel STH270N4F3-6 January 2010 Doc ID 16957 Rev 1 1/13 www.st.