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STH2N120K5-2AG Datasheet Automotive-grade N-channel Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Product status STH2N120K5-2AG Product summary(1) Order code STH2N120K5-2AG Marking 2N120K5 Package H²PAK-2 Packing Tape and reel 1.

Overview

STH2N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 7.25 Ω typ., 1.

Key Features

  • Order code STH2N120K5-2AG VDS 1200 V RDS(on) max. 10 Ω.
  • AEC-Q101 qualified.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested ID 1.5 A PTOT 60 W G(1) S(2, 3).

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