STH360N4F6-2
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1)
- Current limited by package
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
