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STH360N4F6-2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

TAB 2 3 1 H2PAK-2 Figure 1.

Overview

STH360N4F6-2.

Key Features

  • N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet.
  • preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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