STH360N4F6-2 - N-channel Power MOSFET

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STMicroelectronics

Part number	STH360N4F6-2
Manufacturer	STMicroelectronics
File Size	232.91 KB
Description	N-channel Power MOSFET
Datasheet	STH360N4F6-2 Datasheet
Additional preview pages of the STH360N4F6-2 datasheet.

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet.
preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package.
Low gate charge.
Very low on-resistance.
High avalanche ruggedness.

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Published: Mar 17, 2016 |