STH90N55F4-2 mosfet equivalent, n-channel power mosfet.
Type
VDSS RDS(on) max
ID
STH90N55F4-2 55 V
< 0.008 Ω
t(s)
* Exceptional dv/dt capability
* Extremely low on-resistance RDS(on)
uc
* 100% avalanche tested
.
te P
* Switching applications
oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™.
bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance.
2 3 3 1
H².
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