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STHI07N50FI - HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Download the STHI07N50FI datasheet PDF. This datasheet also covers the STHI07N50 variant, as both devices belong to the same high injection n-channel enhancement mode power mos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays. TO-220 ISOWATT220.

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Note: The manufacturer provides a single datasheet file (STHI07N50-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STHI07N50FI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STHI07N50FI. For precise diagrams, and layout, please refer to the original PDF.

STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 V 500 V 10 7A 7A • HIGH ...

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NARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 V 500 V 10 7A 7A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N - channel High Injection POWER MOS transistors (lGBT) which features a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays.

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