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STHI10N50FI - HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Download the STHI10N50FI datasheet PDF. This datasheet also covers the STHI10N50 variant, as both devices belong to the same high injection n-channel enhancement mode power mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (STHI10N50-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STHI10N50FI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STHI10N50FI. For precise diagrams, and layout, please refer to the original PDF.

STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • H...

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NARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf < 1.5 P.s APPLICATIONS: • MOTOR CONTROL N - channel High Injection POWER MOS transistors (IGBT) which feature a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control applications in consumer equipment such as washing machines and tumble dryers and industrial equipment motor control.

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