STI10N62K3 Datasheet - STMicroelectronics

N-channel Power MOSFET

STI10N62K3 Features

* Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitances

* Improved diode

STI10N62K3 General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitab.

STI10N62K3 Datasheet (484.98 KB)

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STI10N62K3

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STMicroelectronics ↗

File Size:

484.98 KB

Description:

N-channel power mosfet.
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packa.

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STI10N62K3 Features

STI10N62K3 General Description

Datasheet Details

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