STI11NM60ND Datasheet - STMicroelectronics

N-Channel Power MOSFET

* TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB)

* Fast-recovery body diode

* Low gate charge and input capacitance

* Low on-resistance RDS(on)

* 100% avalanche tested

* High dv/dt ru

STI11NM60ND

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N-channel power mosfet.

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