STI150N10F7 Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order codes STI150N10F7 STP150N10F7 Table 1. Device summary Marking Package 150N10F7 I2PAK TO-220 August 2014 This is information on a product in full production.
STI150N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness