STI300N4F6 Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Internal schematic diagram D (TAB or 2) G(1) Table.
STI300N4F6 Key Features
- Standard level VGS(th)
- 100% avalanche rated