STI300N4F6 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

123 I²PAK Figure 1.

STI300N4F6 N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package Datasheet — production.

Order code STI300N4F6 VDS 40 V RDS(on) max ID 2.2 mΩ 160 A(1) 1. Limited by wire bonding.
Standard level VGS(th).
100% avalanche rated.