STI360N4F6 Datasheet, STMicroelectronics

TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * 6 Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 .

and AEC-Q101 qualified
* Very low on-resistance
* Low gate charge
* High avalanche ruggedness
* Low gate.

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. $0Y Order codes STI360N4F6 STP360N4F6 Table 1. Devi.